Xem tại sao chọn thiết bị laser microfluidic cho chế biến wafer bán dẫn

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December 16, 2025
Tóm tắt: Trong hướng dẫn này, chúng tôi nhấn mạnh các ý tưởng thiết kế chính và cách chúng chuyển thành hiệu suất.Xem làm thế nào Microfluidic Laser Equipment sử dụng một vòi nước mỏng tóc để hướng năng lượng laser cho chế biến wafer bán dẫnKhám phá cách phương pháp vi công nghệ lai này làm giảm thiệt hại nhiệt, ngăn ngừa ô nhiễm và cải thiện chất lượng cạnh trên vật liệu cứng, mong manh như các tấm SiC và GaN.
Tính năng sản phẩm liên quan:
  • Hybrid micromachining method coupling a thin water jet with a laser beam for precise energy delivery.
  • Total internal reflection guiding mechanism ensures accurate laser beam transmission to the workpiece.
  • Continuous cooling and debris removal during processing for a cleaner, more stable operation.
  • Reduces heat-affected damage, contamination, oxidation, and microcracks in semiconductor materials.
  • Supports various laser wavelengths (1064 nm, 532 nm, 355 nm) and power levels up to 200 W.
  • Configurable nozzle diameters from 30-150 μm using sapphire or diamond materials.
  • High-precision positioning with accuracy up to ±5 μm and repeatability of ±2 μm.
  • Applicable to advanced packaging, wafer dicing, chip drilling, and defect repair processes.
CÂU HỎI THƯỜNG GẶP:
  • What is microjet laser technology?
    Microjet laser technology is a hybrid micromachining process where a thin, high-velocity water jet guides a laser beam using total internal reflection, delivering precise energy to the workpiece while providing continuous cooling and debris removal.
  • What are the key advantages of microjet laser processing versus dry laser processing?
    Key advantages include reduced heat-affected damage, less contamination and redeposition, lower risk of oxidation and microcracks, minimized kerf taper, and improved edge quality on hard and brittle semiconductor materials.
  • Which semiconductor materials are best suited for microjet laser processing?
    It is particularly well-suited for hard and brittle materials like silicon carbide (SiC) and gallium nitride (GaN), as well as silicon wafers, ultra-wide-bandgap materials such as diamond and gallium oxide, and selected advanced ceramic substrates.
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