Tên thương hiệu: | ZMSH |
Số mẫu: | End Effector |
MOQ: | 1 |
giá bán: | by case |
Chi tiết bao bì: | thùng tùy chỉnh |
Điều khoản thanh toán: | T/T |
The SiC ceramic fork arm, also known as a ceramic end effector, is a high-performance robotic component designed for ultra-clean and high-precision wafer handling applications in semiconductor manufacturing. Crafted from advanced silicon carbide (SiC) ceramics, this end effector offers outstanding mechanical strength, low thermal expansion, and excellent chemical resistance—making it ideal for demanding process environments such as vacuum chambers, high-temperature zones, and corrosive gas atmospheres.
Unlike traditional metal or quartz end effectors, the SiC ceramic fork arm ensures minimal particle generation and thermal distortion, offering long-term reliability and precision alignment for wafer transfer, positioning, and load/unload operations.
The SiC ceramic end effector is manufactured using reaction-bonded silicon carbide (RB-SiC) or pressureless sintered silicon carbide (SSiC). The production process typically includes:
Powder Processing: High-purity SiC powder is blended with binders and additives.
Molding/Forming: Using techniques such as cold isostatic pressing (CIP) or injection molding to shape complex geometries, including thin fork arms or pronged structures.
Sintering: Heat treatment at temperatures over 2000°C ensures high densification, strength, and microstructural uniformity.
Precision Machining: CNC grinding and diamond polishing are used to achieve dimensional tolerances down to microns and ultra-flat surfaces, minimizing damage to wafers.
Final Inspection: Non-destructive testing (NDT), dimensional checks, and surface roughness testing ensure each ceramic end effector meets semiconductor-grade standards.
This entire process ensures the end effector retains excellent stiffness, lightweight properties, and non-reactivity in challenging working environments.
The SiC ceramic fork arm / end effector is widely used in semiconductor, photovoltaic, and microelectronic fields. Key applications include:
Wafer Transfer Systems: For handling 6-inch to 12-inch wafers during IC fabrication.
Robotic Arms in Vacuum Chambers: For pick-and-place in CVD, ALD, and dry etching processes.
FOUP/FOSB Load Ports: Integration into robotic systems for transferring wafers between carriers and process modules.
Cleanroom Automation: In high-throughput semiconductor production lines where ultra-clean handling is essential.
Laser Processing or Annealing: Where high temperature resistance and non-contamination are critical.
Its end effector function ensures delicate yet firm gripping of semiconductor wafers without mechanical stress or contamination.
High Purity: Excellent resistance to contamination.
Thermal Stability: Maintains rigidity and shape under thermal cycling.
Low Thermal Expansion: Prevents thermal deformation, improving wafer alignment.
Chemical Resistance: Inert to corrosive gases and plasma environments.
Mechanical Strength: Resistant to fracture, chipping, and warping under mechanical load.
Surface Flatness: Ultra-smooth contact surfaces reduce wafer scratching risk.
Main Specifications of CVD-SIC Coating |
||
SiC-CVD Properties |
||
Crystal Structure |
FCC β phase |
|
Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Q1: Why choose a SiC ceramic end effector over quartz or aluminum?
A1: SiC ceramics offer superior thermal resistance, mechanical strength, and longer service life compared to quartz or metal materials, especially in harsh plasma or high-temperature environments.
Q2: Can the ceramic fork arms be customized to fit my robot or wafer size?
A2: Yes. We offer full customization of fork arm geometry, slot dimensions, and mounting interfaces to match your robotic system and wafer specifications.
Q3: Are these end effectors safe for use in vacuum or plasma systems?
A3: Absolutely. SiC ceramics are fully compatible with ultra-high vacuum (UHV), plasma etching, and reactive ion etching (RIE) environments due to their chemical inertness and low outgassing.
Q4: How durable is the SiC ceramic fork arm under repetitive use?
A4: SiC’s high hardness and toughness allow it to withstand repeated thermal cycles and mechanical handling without degradation, making it ideal for continuous production environments.
Q5: Do you provide testing or certification for each end effector?
A5: Yes, all products undergo rigorous dimensional inspection, flatness testing, and material verification. Certificates of compliance (CoC) and test reports can be provided upon request.
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