|
The 6H Silicon Carbide (SiC) Square Substrate is manufactured from high-purity 6H-SiC single crystal material and precisely processed into a square shape for advanced semiconductor and electronic applications. As a representative material of the third-generation wide bandgap semiconductors, 6H-SiC offers outstanding performance under high temperature, high voltage, high frequency, and high power working conditions.
With excellent thermal conductivity, mechanical strength, chemical stability, and electrical properties, 6H SiC square substrates are widely used in power devices, RF devices, optoelectronics, laser systems, and R&D laboratories. The substrates can be supplied in polished, semi-polished, or unpolished surface conditions with customized sizes and thicknesses.
Ultra-high hardness (Mohs hardness ≈ 9.2)
High thermal conductivity (~490 W/m·K) for efficient heat dissipation
Wide bandgap (3.0 eV), suitable for extreme environments
High breakdown electric field strength
Excellent chemical resistance and oxidation resistance
High electron mobility for high-frequency performance
Stable crystal structure and long service life
| Parameter | Specification |
|---|---|
| Material | 6H Silicon Carbide (6H-SiC) |
| Shape | Square |
| Standard Sizes | 5×5 mm, 10×10 mm, 20×20 mm (Custom Available) |
| Thickness | 0.2 – 1.0 mm (Custom Available) |
| Surface Finish | Single-side polished / Double-side polished / Unpolished |
| Surface Roughness | Ra ≤ 0.5 nm (Polished) |
| Conductivity Type | N-type / Semi-insulating |
| Resistivity | 0.015 – 0.03 Ω·cm (N-type typical) |
| Crystal Orientation | (0001) Si-face or C-face |
| Edge | With or without chamfer |
| Appearance | Dark green to semi-transparent |
PVT (Physical Vapor Transport) single crystal growth
Orientation and square cutting
High-precision grinding and thickness control
Single or double side polishing
Ultrasonic cleaning and cleanroom packaging
This process ensures high flatness, low surface defects, and excellent electrical consistency.
Power semiconductor devices (MOSFET, SBD, IGBT)
RF and microwave electronic devices
High-temperature electronic components
Laser diodes and optical detectors
Chip research and prototype development
University laboratories and semiconductor research institutes
Microfabrication and MEMS processing
Genuine 6H-SiC single crystal material
Square shape for easy handling and device fabrication
High surface quality with low defect density
Wide customization range for size, thickness, and resistivity
Stable performance in extreme environments
Support for small-batch prototyping and mass production
100% inspection before delivery
Q1: What is the difference between 6H-SiC and 4H-SiC?
A: 4H-SiC is more commonly used in commercial power devices today due to higher electron mobility, while 6H-SiC is preferred in certain RF, microwave, and special optoelectronic applications.
Q2: Can you supply unpolished 6H-SiC square substrates?
A: Yes, we offer polished, lapped, and unpolished surfaces based on customer requirements.
Q3: Do you support small-size square substrates?
A: Yes, square sizes down to 2×2 mm can be customized.
Q4: Are inspection and test reports available?
A: Yes, we can provide dimensional inspection reports, resistivity test data, and surface roughness reports.
