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| Tên thương hiệu: | ZMSH |
| MOQ: | 2 |
| giá bán: | 20USD |
| Chi tiết bao bì: | thùng carton tùy chỉnh |
| Điều khoản thanh toán: | T/T |
c are key consumable and structural parts used in semiconductor front-end equipment. They are widely applied in Dry Etch, EPI, Diffusion, and RTP processes.
With excellent high purity, thermal conductivity, plasma corrosion resistance, high-temperature stability, low particle generation, and precision machinability, CVD SiC components are suitable for demanding semiconductor process environments.
Image suggestion: Use the Dry Etch equipment image and component exploded view.
In dry etching equipment, CVD SiC and silicon components are mainly installed inside the process chamber. They are used for plasma control, wafer edge protection, electrode systems, chamber protection, and process uniformity improvement.
| Component | Material | Application |
|---|---|---|
| Inner Electrode | Si / SiC | Used in the electrode system to control plasma reaction |
| Outer Electrode | Si / SiC | Works with the inner electrode to improve etching uniformity |
| C-Shroud Ring | Si | Used for chamber protection and plasma/gas flow control |
| Hot Edge Ring | Si / SiC | Protects wafer edges and improves edge etching performance |
| Ground Cover Ring | Quartz | Used for grounding and chamber protection |
| Couple Ring | Quartz | Supporting and coupling component inside the chamber |
| Quartz Ring | Quartz | Used for sealing, support, or insulation in the chamber |
CVD SiC components offer excellent resistance to plasma corrosion in fluorine-based and chlorine-based etching environments. They help reduce particle contamination, minimize component wear, extend maintenance intervals, and improve process stability.
Image suggestion: Use the product series image showing Si Electrode, Si Ring, SiC Ring, and SiC Electrode.
Si Electrodes are mainly used in dry etching equipment as electrode components. They are suitable for mature semiconductor processes and equipment spare part replacement.
| Item | Specification |
|---|---|
| Material | Single Crystal Silicon |
| Max Diameter | Max 480 mm |
| Resistivity | Low Res. <0.02 Ω·cm; Middle Res. 1–4 Ω·cm; High Res. 70–90 Ω·cm |
| RRG | <5% |
| Gas Hole | Diameter 0.2–0.8 mm |
| Surface Condition | Polished / Lapped / Ground |
| Machining Precision | <10 μm |
| Quality Inspection | Free of chips, scratches, cracks, stains and other defects |
Si Ring
Si Rings are used in etching chambers for wafer edge protection, support, and plasma control.
| Item | Specification |
|---|---|
| Material | Single Crystal Silicon / Multi Crystal Silicon |
| Max Diameter | Max 480 mm |
| Resistivity | Low Res. <0.02 Ω·cm; Middle Res. 1–4 Ω·cm; High Res. 70–90 Ω·cm |
| RRG | <5% |
| Surface Condition | Polished / Lapped / Ground |
| Machining Precision | <10 μm |
| Quality Inspection | Free of chips, scratches, cracks, stains and other defects |
CVD SiC Rings are used as edge rings, protection rings, and support rings in Dry Etch, EPI, RTP, and other semiconductor equipment.
| Item | Specification |
|---|---|
| Material | CVD SiC |
| Max Diameter | Max 370 mm |
| Resistivity | Low Res. <0.02 Ω·cm; Middle Res. 0.2–25 Ω·cm; High Res. >100 Ω·cm |
| RRG | <5% |
| Surface Condition | Ground |
| Machining Precision | <10 μm |
| Quality Inspection | Free of chips, scratches, cracks, stains and other defects |
CVD SiC Electrodes are used as key electrode components in dry etching equipment. Compared with conventional silicon electrodes, CVD SiC electrodes provide better corrosion resistance and longer service life.
| Item | Specification |
|---|---|
| Material | CVD SiC |
| Max Diameter | Max 330 mm |
| Resistivity | Low Res. <0.02 Ω·cm; Middle Res. 0.2–25 Ω·cm; High Res. >100 Ω·cm |
| RRG | <5% |
| Surface Condition | Ground |
| Machining Precision | <10 μm |
| Quality Inspection | Free of chips, scratches, cracks, stains and other defects |
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Material Properties of CVD Polycrystalline SiC
Image suggestion: Use the material property table image.
CVD polycrystalline SiC is produced by chemical vapor deposition. It features a dense structure, high purity, excellent corrosion resistance, and strong stability in semiconductor clean process environments.
| Property | Unit | Typical Value |
|---|---|---|
| Density | g/cm³ | 3.21–3.22 |
| Flexural Strength | MPa | 320–380 |
| Thermal Conductivity | W/m·K | 240–360 |
| Grain Size | μm | 5–10 |
| Purity | % | 99.99997 |
| Vickers Microhardness | HV | 3100–3700 |
| Elastic Modulus | GPa | 450–530 |
| XRD Rate | - | 0.65–1.1 |
| CTE, RT to 1000°C | 10⁻⁶/K | 4.8–5.1 |
The purity of CVD SiC can reach 99.99997%, helping reduce the risk of metal contamination in semiconductor front-end processes.
CVD SiC maintains good stability in fluorine-based and chlorine-based plasma environments, reducing component wear and particle generation.
With thermal conductivity of 240–360 W/m·K, CVD SiC helps improve thermal field uniformity and process consistency.
CVD SiC components are suitable for EPI, Diffusion, RTP, and other high-temperature processes. They maintain good dimensional stability during long-term use.
High Vickers hardness provides excellent wear resistance and helps extend component service life.
Products can be customized according to customer drawings, including outer diameter, inner diameter, holes, grooves, steps, chamfers, surface condition, and assembly precision.
CVD polycrystalline SiC components are widely used in:
CVD SiC offers better plasma corrosion
